介質(zhì)材料電噪聲測試技術(shù)及其應(yīng)用研究.pdf

1、西安電子科技大學(xué)碩士學(xué)位論文介質(zhì)材料電噪聲測試技術(shù)及其應(yīng)用研究姓名：王棟申請學(xué)位級別：碩士專業(yè)：材料科學(xué)與工程指導(dǎo)教師：杜磊20080101AbstractWithindepthstudyofthenoisetheoryitwasfoundthatlowfrequencynoisecanbeasensitivereflectionofinternaldefectsinelectroniccomponents，includingmater

2、ialdefectandpotentialdefectsinthedeviceduringmanufactureoroperation，thefailureofmostelectroniccomponentsiscausedbythosedefects，thereforemeasurementoflowfrequencynoiseofelectronicdevicesCallreflectitsintrinsicqualityandre

3、liabilityNoisemeasurelTtentforcharaeterizationthereliabilityofelectronicdeviceshasbeenawiderangeofresearchandapplicationinworldwideSomeconventionalelectroniccomponentsnoisemeasurementmethodisrelativelymaturesuchas：MOSFET

4、，Optocouplerfilmandthick—filmresistance，polycrystallinesemiconductormaterialsHowevertherestillhavealotofnoisemeasurementunresolvedisSues，suchas：verylowresistance(metalcontact)，dielectricmaterials(capacitors)，theminimumcu

5、rrent(antipartialsemiconductorjunction)andthegreatcurrent(powerdevice)，andsoollThisPaperstudyondielectricmaterials(capacitors)noisemeasurementproblem，mainlycompletedthefollowingwork：1Detailedanalysisofthetraditionalnoise

6、measurementwhyfailedinmeasBredielectricmaterials(capacitors)，andthrou豳in—depthstudythenoisemeasureandcharacterizationtechnologydesignedandachievecurrentnoisemeasuresystems2IntheultrathinSi02gatedielectriclayerleakagecurr

7、entnoisemeasurementswefoundinsmallstressconditionsthenoisespectrumshowinga，fnoisecharacteristics，andthenoiseincreasewithvoltagestressgrowinginlargervoltagestress，observedthestress—inducedleakagecurrent，andfoundRTSnoisein

8、thestressinducedeakagecurrent。3ByanalysistheRTSnoisesignalintime／frequencydomain，wefoundthatthetrap—assistedtunnelingistheresoncausedRTSnoisestressproducedtheSi02layerofsiliconspacetraps，whichtrapandemittingelectronicsca

9、usedtheRTSnoise；andwealsofoundthesiliconvacancytrapsintheSi02layerassociatewithvoltagestressWhenincreaseofvoltagestressthenumberoftrapswillalsobeincreased4Wealsomeasurenoiseinsolidtantalumelectrolyticcapacitorsbythismeth