磁控濺射法所沉積SiN-,x-非晶薄膜的結(jié)構(gòu)分析及發(fā)光特性研究.pdf

1、北京交通大學(xué)碩士學(xué)位論文磁控濺射法所沉積SiN非晶薄膜的結(jié)構(gòu)分析及發(fā)光特性研究姓名：鄔洋申請學(xué)位級別：碩士專業(yè)：光學(xué)工程指導(dǎo)教師：衣立新20080601ABSTRACTABSTRACT：Inthelastdecade，thesiliconbasednanomaterialhasgrowntobeaspaIl—newphotoelectroncommunicationsmaterial，whichisimportantinlight—em

2、itteraIldphotoelectronicintegrationtechnologyEffortshavebeendevotedtostudythePLandELoriginofsiliconnanocrystalsembeddedinaSirichoxidematrixorSi／Si02superlatticeduetoquantumconfinementeffect(QCE)HoweveraSiNxfilmsareregard

3、edasidealcandidatesforthestudyofPLinsiliconbasedcompoundduetoitswidegap(about53eV)，stronglightemissionandlowerbarriersforelectronsandholesthansiliconoxideInthispaperamorphousSiNxfilmsweredeposited011Sisubstratesbymagnetr

4、onsputteringtechnologyThemechanismofdepositionandinnerstructureofamorphousSiNxfilmswithdifferentsputteringpowerandannealingtemperatureduringpreparationwerestudiedbVFTIRspectraandXPSmeasurementOneabsorptionbandoftheSiNxfl

5、lmswhichwasassignedtothestretchingvibrationmodeofSiN—SibondWasdetectedbvFouIjer仃ansfo咖infrared(FTIR)spectroscopyItshowedthataredshiftfortheabsorptionpeakoccurredintheFTIRspectrumwiththeincreasingofsputtcringpower；Nev酬1el

6、essablueshiftfortheabsorptionpeakoccurredafterannealingThephasesofSiNxfilmswereseparatedintoNc—SiandSi3N4athightemperatureAccordingtoXPSallalysis，thestructuresofSiNSi3，SiN2Si2，SiN3SiandSiSi4wereformedinSiNxfilmsFumlefmor