單軸應(yīng)變硅納米CMOS設(shè)計研究.pdf

1、創(chuàng)新性聲明秉承學(xué)校嚴(yán)謹(jǐn)?shù)膶W(xué)風(fēng)和優(yōu)良的科學(xué)道德，本人聲明所呈交的論文是我個人在導(dǎo)師的指導(dǎo)下進(jìn)行的研究工作及取得的研究成果。盡我所知，除了文中特別加以標(biāo)注和致謝中所羅列的內(nèi)容以外，論文中不包含其它人已經(jīng)發(fā)表或撰寫過的研究成果；也不包含為獲得西安電子科技大學(xué)或其它教育機(jī)構(gòu)的學(xué)位或證書而使用過的材料。與我一同工作的同志所做的任何貢獻(xiàn)均已在論文中做了明確的說明并表示了謝意。申請學(xué)位論文與資料若有不實之處，本人承擔(dān)一切相關(guān)責(zé)任。本人簽名：宜!】牛關(guān)

2、于論文使用授權(quán)的說明本人完全了解西安電子科技大學(xué)有關(guān)保留和使用學(xué)位論文的規(guī)定，即：研究生在校攻讀學(xué)位期間論文工作的知識產(chǎn)權(quán)單位屬西安電子科技大學(xué)。本人保證畢業(yè)離校后，發(fā)表論文或使用論文工作成果時署名單位仍然為西安電子科技大學(xué)。學(xué)校有權(quán)保留送交論文的復(fù)印件，允許查閱和借閱論文；學(xué)?？梢怨颊撐牡娜炕虿糠謨?nèi)容，可以允許采用影印、縮印、或其它復(fù)制手段保存論文。(保密的論文在解密后遵守此規(guī)定)本人簽名：導(dǎo)師簽名：日期：型至：三：2日期：_二王

3、：2AbstractAbstractWiththedevelopmentofintegratedcircuitsthefeaturesizeiSbecomingsmallerandsmallerNewmaterials，newdevicestructuresandnewdesignmethodologiesareneededtoimprovetheperformanceofintegratedcircuitswhenthefeature

4、sizeofdevicesenterintonanoscalestrainedsiliconwaswidelystudiedandappliedtothefabricationofintegratedcircuitsasitiScompatiblewithcurrentsiliconprocessandtheimprovementofcarriermobilitywiththeintroductionofstressStrainedN／

5、PMOSdevicesweredesignedbasedontheeffectsofdifferentdevicestructuresontheperformanceofdevices，andthenoptimizedtheprocessrealizationofdesigneddevicestructureobtainedtheoptimizeddeviceparametersThedistributionofstressinchan

6、nelregionofdevicesandtheenhancementofstressonelectriccharacteristicwerestudiedonthebasisofdesignedstructureitshowsthat266percentand115percentinsaturationcurrent261percentand95percentintransconductancehavebeenimprovedcomp

7、aredstrainedN／PMOSwithconventionalN／PMOSdevicesAtthesametime，themathematicalrelationshipbetweencapacitanceandfrequencycharacteristicsofMOSdevicesandthedevicesparameterswerestudiedtheresultsindicatethat：capacitanceofMOSde

8、viceswasincreasedwiththeintroductionofstressinducedprocessThecutofffrequencyofstrainedN／PMOSdeviceincreasedwiththeincreasingofstressFinallyCMOSinverterandathreestageringoscillatorwerebuilttostudythee虢ctofstressontheconsc

9、ientresponseofCMOSinverterandtheoscillationfrequencyofringoscillatortherelationshipbetweenpropagationdelayovershootvoltageofCMOSinverteranddevicesparameterswerealsostudieditshowsthat：thepropagationdelayofCMOSinverterWasr

10、educedandtheovershootvoltageofinverterwasincreasedwiththeintroductionofstressandoscillationfrequencyofringoscillatorbuiltwithstrainedCMOSinvertersreachedto25GHZtheexcellentperformanceofdesigneddevicesinthispaperwasverifi