中頻孿生磁控濺射等離子體特性與氧化物薄膜沉積研究.pdf

1、大連理工大學(xué)碩士學(xué)位論文中頻孿生磁控濺射等離子體特性與氧化物薄膜沉積研究姓名：黃開玉申請學(xué)位級別：碩士專業(yè)：等離子體物理指導(dǎo)教師：李國卿20050301大連理T大學(xué)碗f’學(xué)位論文PlasmaCharacteristicsofmidfrequencydualtargetsmagnetronsputteringsystemandoxidefilmsdepositionresearchAbstractThedevelopment，princi

2、pleandapplicationsofmagnelzonsputteringtechniqueareintroducedinthispaper，DepositionteclmiqueandapplicationsofMgOandA1203filmsarealsointroducedAmidfrequencyunbalancedualtargetsmagnetronspuUefingsystemisusedtoprepareMgOand

3、A1203filmsPlasmacharacteristicsofnljssystemalestudieelThecausesofmetallicstatesputteringwithMgtargetareanalyzedDuringdepositionprocess，thetemperatureoftargetincreasesforthebadcoolingconditionwhichincreasethesputteringrat

4、e，SO婦metallicstatesputteringisformedTargetevaporationCallalsobeariseninthisprocessMgOfilmsarepreparedinthissystemandtheirstructureandthicknessaremeasuredTheresultsindicatethatMgO(200)phaseisformedinthefilmsDepositionpara

5、metershavegreateffectsonthedepositionrate0f廿leMgOfilmsInsomedegreethedepositionrateoftheMgOfilmsincreasedwiththe02partialpressureandsputteringpowerandbiasvoltage；gaspresstueshaven’tinfluencetoit，ErdopedA1203filmsareprepa

6、redandphotoluminescence(PL)spectrunasaremeasuredXRDresultsindicatedthatEr4A1209andAlloEr6024phasesarefbmledinthefilmsafteramaealingcomparedwithnon—crystalwithoutannealedLowangleXRDindicatesthefilmsaremulti，layerstraclllr

7、eThePLspectrtmlsshowthatthepeakofPLwilldecreasewithincreasingNasvoltage，oxygenpartialpressureandgaspressureMoreoverthepeakofPLwilldecreaseacutelywithdepositiontemperatIareincreasedIncreasingthethicknessoffilmswilleMaance