熱激勵(lì)諧振式碳化硅微結(jié)構(gòu)高溫壓力傳感器研究.pdf

1、西安電子科技大學(xué)碩士學(xué)位論文熱激勵(lì)諧振式碳化硅微結(jié)構(gòu)高溫壓力傳感器研究姓名：于建旺申請(qǐng)學(xué)位級(jí)別：碩士專(zhuān)業(yè)：微電子學(xué)與固體電子學(xué)指導(dǎo)教師：李躍進(jìn)20060101ABSTRACTAbstractAsthemostpotentialwidebandgapsemiconductormaterials，siliconcarbideisallexcellentmaterialwithsuperiorthermal，electrical，mechan

2、icalandchemicalpropertiesforfabricationofhJ曲temperatureMEMSdevicesInthispaper，anovelthermallyexcitedsiliconcarbidemicromechanicalresonantpressuresensorwhichcanworkat500℃hasbeendesignedAnalysisthematerialcharacteristicofs

3、iliconcarbideThestructureandclassificationofthesiliconcarbidecrystalisspecifiedAmongthesecrystals，6HSiChasthebettercharacteristictofabricatethesensorMathematicmodelofthesensingstructureisestablishedbyelasticmechanicsanal

4、ysis，duringwhichsmall—displacementtheoryandlarge—displacementtheoryalebothusedMoreoveraccordingtoatypicalmicrosensorsensingstructure，afiniteelementanalysismodelofitssensingunitisestablishedwiththehelpFEAsoftwareofANSYSAc

5、cordingtothetypicalmicrosensorsensingstructure，theanal”icsimulationandthefiniteelementanalysisofrectanglediaphragmandbeamisprovided，andthedisplacement，strainandstressofdiaphragmandthefiequencycharacterofbeamarecalculated

6、TheworkingcharacterofthesensorwhendiaphragmhassmalldisplacementisalsodiscussedThecharacterofstructuresizeisalsoanalyzedprimarilyinthischapterAnalysistemperaturefielddistnbutingandinitialthermalstresscausedbysuddenincreas

7、eordeceaseofenvironmenttemperatureThermaleffectofenvironmenttemperaturetotheworkingcharacterofthissensingstructureisdiscussedbythethermodynamicsanalysisandfiniteclementanalysisFinally，analysistheinfluencetomeasurementsen

8、sitivitywhentheparametersofsensingstructurechangesGivemultiparametersoptimizingresultsofthesensingstructureanddiscusstheguidelineofparameterchoicesconcerningofmachiningcondition，permittedstructurevolumeandetcKeywords：sil