碲鎘汞環(huán)孔P-N結(jié)理論分析與測試.pdf

1、南京理工大學(xué)碩士學(xué)位論文碲鎘汞環(huán)孔PN結(jié)理論分析與測試姓名：邢素霞申請學(xué)位級別：碩士專業(yè)：物理電子學(xué)指導(dǎo)教師：蔡毅常本康2002.1.1AbstractInthisdissertation，theHgCdTeloopholePNjunctionisinvestigatedmainlyfromanalyzingandtestingtheIVcharacteristicThefollowingisthemainworkandresults：

2、Intheory：(1)thesummarizationismadeoftheHgCdTelineargradientjunction，andthecharacteristicsofcontactpotentialandthewidthofspatialelectmnicregionvaryingwithcarrierdensitygradsareobtained(2)TheRoAofloopholeP_Njunctionunderid

3、ealconditionslimitedbydiffusioncunentisanalyzed，andfoundthattheloopholePNjunctionhasthesamehightheoreticalupperlimitvalve，whichsupposingtheHgCdTeloopholePNjunctionisspecialverticaljunction(3)Accordingwiththedependenceofg

4、eneration—recombinationcurrentanddiffusioncurrentontemperature，thecharacteristicandfunctionaresetupbetweentemperatureandcompositionwhichequatethegeneration—recombinationcurrenttodiffusioncurrentinthattodifferentiatingthe

5、leakagemechanismofloopholePNjunctionInexperiment：(1)Theresultsobtainedfromtestingbetweenaelectrodeandsomedifferentelementsindicatethatthesample’Sleakagecurrentisconcernedwiththeareaofelement(2)Variabletemperaturetestisap

6、pliedinthisdissertation，andfoundthedominantcurrentissurfacecurrent(3)Thetestwasmadebetweenthesameelementanddifferentsizeelectrodes、Vhentheelectrode’Sareaismuchlargerthantheelements，theeffectofelectrode’Sdimensioniscompar

7、ablysmall(4)TheabnormalphenomenainIVcharacteristictestwereinvestigatedbytheoryandexperiments，andfoundthattheetchingprocessisthemainreason(5)Toaddingtestmethodsofdevice，weobtainedthecutoffwavelengththroughseriesresistance