應(yīng)變Si載流子散射機(jī)制及特性研究.pdf

1、西安電子科技大學(xué)碩士學(xué)位論文應(yīng)變Si載流子散射機(jī)制及特性研究姓名：章娜申請學(xué)位級別：碩士專業(yè)：凝聚態(tài)物理指導(dǎo)教師：張鶴鳴20100101AbstractAbstractStrainedSihasthebroadprospectsinhighspeed／lli曲一performancedevicesandcircuitsforitsadvantagesofhi曲mobilityadjustablebandstructureandbeenc

2、ompatiblewithSiprocessIt’SailimportantresearchareaofconcelTlathomeandabroadThescatteringmechanismandcharacteristicofstrainedsiliconisthetheoreticalbasisfortheindepthstudyofstrainedSicartiermobilityenhancementTillnowthere

3、arelittlepapersaboutitBaseonthePhysicalmechanismofstrainedSi，thisthesismainlystudythescatteringmechanismandcharacteristicofstrainedsiliconThisthesisfirstanalyzestheformationmechanismofSistrain，thusparameters，necessarytog

4、etscatteringprobability，aleobtainedThen，withtheanalysisofthequantummechanicsfundamentofscatteringmechanism，thisthesisstudiesthemainscatteringmechanismsinSistrain，suchasionizedimpurityscattering，acousticalphononscattering

5、，opticphononscatteringandintervalleyphononscattering，andbuildsthecorrespondingscatteringmodelsFinallyusingthesecorrespondingscatteringmodels，therelationshipbetweenenergyE，GeconcentrationandtheprobabilitiesisobtainedThemo

6、delshavebeensimulatedbyMatlabandallresultsarepresentedTheresultsshowthatcomparedwithnon—strainedsilicon，thetotalscatteringprobabilitiesaboutelectronicsandholeofstrainedsiliconweresignificantlyreducedInaddition，withthesfl

7、_tlleGeconcentrationthetotalscatteringprobabilityaboutelectronicsofstrainedsilicondecreaseswithincreasingenergywhilethetotalscatteringprobabilityabouttheholeofstrainedsiliconincreaseswithincreasingenergyThescatteringmech

8、anismprobabilitymodelsobtainedinthisthesiscouldprovideimportanttheoreticalbasesforboththeunderstandingoftheSistrainphysicalpropertiesandthedeviceperformanceimprovementsKeywords：strainedSiscatteringmechanismscatteringmode