InGaAs-GaAs應(yīng)變量子阱固態(tài)源分子束外延生長的研究.pdf

1、南開大學(xué)碩士學(xué)位論文InGaAsGaAs應(yīng)變量子阱固態(tài)源分子束外延生長的研究姓名：康培申請學(xué)位級別：碩士專業(yè)：凝聚態(tài)物理指導(dǎo)教師：舒永春201105AbstractAbstractTheOPS—VECSEL(OpticallyPumpedSemiconductorVerticalExternalCavitySurfaceEmissionLaser)isanovelsemiconductorlaserandcanbeappliedinma

2、nyfieldspotentiallyThegrowthofInGaAs／GaAsstrainedquantumwellsasactiveregionofOPSVECSELusingsolidsourcemolecularbeamepitaxywerestudidedinthispaperThemaindevelopmentsandresultsaresummarizedasfollows：1Theinfluenceonusingdif

3、ferentInatomssourogfurnacetogrowInGaAs／GaAsstrainedquantumwellswassmdiedTheanalyzedresultsindicatethatusingtheMuscletypeInatomssourcefurnacetogrowchipcanimprovethequalityofthechip2AVECSELchipwithwavelengthof1064n／nwasgro

4、wnbyMBEResultsofSEM、photoluminescence(PL)andreflectivityofthechipshowtheaccuracyofgrowthTheexperimentalresultsindicate：theoptimizedgrowthconditionarepropitioustosignificantlyimprovetheopticalperformanceofthechipTheoretic

5、alanalysisshowsagoodagre圯rnentwimtheexperimentalresult3GrowthinterruptionWasusedattheinterfacebetweentheInGaAswelllayerandGaAsbarrierlayertoallowtimeforthesubstratetemperaturetobechangedThiswillavoidthethermallagassooate

6、dwimattemptingtochangethesubstratetemperatureasgrowthproceedsGrowthinterruptionWasusedforimprovingthequalityoftheinterfaceCharacterizationofthelayerstructurebyphotoluminescence，showedthenecessityforagrowthinterruption18s

7、ThefunctionofIninterruptionwasanalyzedbycomparingthePLspectraoffoursamplesResultsofphotoluminescenceofthe980nmVECSELchipsshowedthatthechipwimIninterruptioncouldobtainthenarrowerPLspectrumpeakcomparingtotheonewithomIninte