第五章單晶矽及多晶矽太陽(yáng)能電池

1、Applications of Photovoltaic Technologies,2,單(多)晶矽太陽(yáng)能電池的製程技術(shù),,,,,,,,以規(guī)則性以及週期性進(jìn)行三度空間分布地排列而成的鑽石結(jié)構(gòu),,,,,,,3,Si的結(jié)晶型態(tài),,,,,,,,非晶矽的、多晶矽的、以及單晶矽的三種不同的結(jié)晶型態(tài),,,,,,,,4,Solar PV Chain,There are several steps from raw material to power

2、 systems,,5,矽的製造過(guò)程,,,,冶金級(jí)矽(MG-Si),多晶矽原料(Poly-Si),,矽(Quartz),,,單晶矽(sc-Si),,多晶矽(mc-Si),,西門子製程,乙西爾製程,CZ,FZ,Casting,Ribbon,,6,冶金級(jí)矽(MG-Si)的製程-1,,,,,,,,,,,,,,,,,冶金級(jí)矽材料的製程流程 - 碳熱還原製程法的示意圖,7,,,,,,,,,,,,,,,,,碳熱還原製程 (Carbothe

3、rmic Reduction Process),主反應(yīng)SiO2(s) ? 2C(s) ? Si(l) ? 2CO(g) ? CO2(g)副反應(yīng)Si(l) ? 1/2O2(g) ? SiO(g)SiO(g) ? 1/2O2 ? SiO2(s),冶金級(jí)矽(MG-Si)的製程-2,8,,,,,,,,,,,,,,,,,碳熱還原製程 (Carbothermic Reduction Process),在內(nèi)層高溫?zé)釁^(qū)：反應(yīng)溫度在1,90

4、0~2,100?C2SiO2(l) ? SiC(s) ? 3SiO(g) ? CO(g)SiO (g) ? SiC(s) ? 2Si(l) ? CO(g)在外層低溫冷區(qū)：反應(yīng)溫度小於1900?CSiO(g) ? 2C ? SiC(s) ? CO(g)2SiO(g) ? Si(l) ? SiO2(s),冶金級(jí)矽(MG-Si)的製程-3,9,冶金級(jí)矽(MG-Si),,,,,,,,,,,,,,,,Si的純量約為98.5%不存

5、物如下所列,10,,,,,,,,,,,,,,,,鑄型壓碎製程 (Casting Scratch Process),,西門子(Simen)製程法的製作流程示意圖,多晶矽原料(Poly-Si)的製程示意圖,第五章　單晶矽及多晶矽太陽(yáng)能電池　P,11,多晶矽原料(Poly-Si)的製程-1,152,,,,,,,,,,,,,,,,,精煉製程 (Refining Process),其主要的反應(yīng)式如下：3(SiO2) ? 4Al ? 3Si(l)

6、 ? 2(Al2O3)SiO2 ? 2Ca ? Si(l) ? 2(CaO)SiO2 ? 2Mg ? Si(l) ? 2(MgO)Si(l) ? O2 ? (SiO2),12,,,,,,,,,,,,,,,,鑄型壓碎製程 (Casting Scratch Process),第一階段化學(xué)反應(yīng)式Si(s)?3HCl?SiHCl3?H2Si(s) ? 4HCl ? SiCl4 ? 2H2SiCl4 ? H2 ? SiHCl3 ? H

7、Cl3SiCl4 ? 2H2?Si ? 4SiHCl32SiHCl3 ? SiCl4 ? Si ? 2HCl,多晶矽原料(Poly-Si)的製程-2,13,,,,,,,,,,,,,,,,鑄型壓碎製程 (Casting Scratch Process),第二階段化學(xué)反應(yīng)式2SiHCl3 ? SiH2Cl2 ? SiCl4SiH2Cl2 ? Si ? 2HClHSiCl3 ? H2 ? Si ? 3HClHSiCl3 ? HCl

8、 ? SiCl4 ? H2,多晶矽原料(Poly-Si)的製程-3,14,,,,,,,,,,,,,,,,,乙西爾製程法的製作流程示意圖,,多晶矽原料(Poly-Si)的製程示意圖,15,Solar cell – Sand to Si,16,單晶矽的製程技術(shù),,,,,,,,柴可夫斯基長(zhǎng)晶法 (a) 以及浮動(dòng)帶熔融長(zhǎng)晶法 (b),,,,,,,,,17,,Czochralski (CZ) process: (CZ Si wafer),18,P

9、roduction of mc-Si,,,,mc-Si ingot,Si melt,Heat exchanger,Direction solidification,Poly Si,,,19,20,Dicing of mc-Si,線鋸(Wire sawing),mc-Si block,mc-Si wafer,切塊(Dicing),21,Si ribbons (wafers),Reducing material consumption by

10、:1.Producing thinner wafers2.Reducing kerf loss,Wafer thickenss < 250 ?m Very low kerf loss Efficiency over 14%,EFG growth,Methods of producing Si ribbons1.The edge defined film fed growth process (EFG)

11、2.Ribbon growth on substrate (RGS)3.Silicon sheets from powder (SSP),SSP growth,Si sheet from powder,,,,22,1. 清洗蝕刻2. 磷擴(kuò)散3. 鍍抗反射層,,,,P-type wafer,結(jié)晶矽太陽(yáng)電池製程步驟例(I),23,,,4. 網(wǎng)印5. 燒結(jié),結(jié)晶矽太陽(yáng)電池製程步驟例(II),臺(tái)灣太陽(yáng)光電廠商供應(yīng)情形,24,