bi,4ti,3o,12及na,0.5bi,0.5tio,3鐵電薄膜摻雜的制備工藝及性能研究

1、煙臺大學碩士學位論文BiTiO及NaBiTiO鐵電薄膜摻雜的制備工藝及性能研究姓名：李大吉申請學位級別：碩士專業(yè)：材料學指導教師：王卓20080601煙 臺 大 學 碩 士 學 位 論 文 煙 臺 大 學 碩 士 學 位 論 文 IIAbstract In resent twenty or thirty years, people aim at developing ferroelectric memories. They have

2、intensively studied ferroelectric thin films integrated with semiconductor. As the widely used ferroelectric materials, PbTiO3, Pb(Zr,Ti)O3, Pb(Mg,Nb)O3,etc. contain PbO from 60% to 70% by weight, which do heavy damage t

3、o our environment. Bi4Ti3O12 films show property degradation after being subjected to 107 read/write switching cycles. (Bi4-xAx)Ti3O12 film has been investigated extensively for its higher remnant polarization and fatig

4、ue-free characteristic. Recently, Na0.5Bi0.5TiO3 and K0.5Bi0.5TiO3 as lead-free materials have attracted considerable attention from the viewpoint of environmental protection. In this work, the preparation and properties

5、 investigation about Pr-substituted Bi4Ti3O12 thin films and Na0.5Bi0.5TiO3-K0.5Bi0.5TiO3 system were studied. We prepared four different proportion of Bi4Ti3O12, 0.15Pr-Bi4Ti3O12, (Na1-xKx)0.5Bi0.5TiO3 (x=0,0.2)thin fi

6、lms by the method of MOSD+ spin-coating. We studied the structure, surface morphologies and electric properties of the films by thermal analysis, infrared spectrum analysis, the x-ray diffraction analysis, atomic force m