0.13μmcmos工藝射頻mos場效應(yīng)管建模

1、Y1D38s8：分類號：I!生密級；垂煎UDC：&型，5￡學(xué)號：Q3Q3鰹⑨東南大學(xué)碩士學(xué)位論文013ktmCMOS工藝射頻MOS場效應(yīng)管建模研究生姓名：池熊塞導(dǎo)師姓名：董凰豎數(shù)攮申請學(xué)位級別王堂砸學(xué)科專業(yè)名稱墮路與基統(tǒng)論文提交日期2Q塑生3縣論文答辯日期2Q蛆壘!且目學(xué)位授予單位壺直太堂學(xué)位授予日期2Q籩望日目答辯委員會主席!量叁型評閱人i絲熱基堡：2006年月日東南大學(xué)碩士學(xué)位論文AbstractTherapidprogressin

2、thewirelesscommunicationhasinducedagreatmarketdemandforradiofrequencyintegrationcircuits(RFICs)WiththecontinuousscalingofCMOStechnology，thecutofffrequencyofMOSFEThasexceeded100GHz，whichmakestheCMOStechnologyagoodcandidat

3、efortherealizationofRFICsWiththeadvantageoflowcosthighlevelofintegration，lowpowerandeaseofintegrationinsystemon—chip(soc)，therearemanyCMOSRFICemergedinthepastsevernyearsHowever，itisstillverychallengingtodesignRF1C“inCMOS

4、technologyOneofthemajorbarriersisthelackofgoodmodelforRFapplicationToreducethedesignperiodandthetimeto—marketofCMOSRFICitisnecessarytoprovideaccuratemodelforRF1CdesignersAlso，RFMOSFETmodelingin0139mCMOStechnologyisnotmat

5、ure，especiallythemodelsforRFapplicationThisthesisMIIcarryouttheinvestigationonRFapplicationMOSFETmodelingin013jxmCMOStechnologyFirst，thebackgroundofourresearchisintroduced，includingthehistoryofMOSFETmodel，thetrendsandreq

6、uirementsoftheMOSFETmodelsAlso，theflowforthemodeldevelopmentissummariedSecondgtbriefintroductionforMOSdevicesispresented，andthescalingeffectandeviceperformanceisanalyzedNext；thedesignofoptimizedlayoutforRFMOSFETsin0139in

7、CMOStechnologyandthecharacterizationofthesetransistorsisaccomplishedFinally，accuratesmallsignalmodelingfortheseRFMOSFETisimplementedwithaequivalentcircuitmodelandanimprovedapproachforparameterextractionofthemodelispropos