平面型共振隧穿二極管與共振隧穿晶體管的研究與應(yīng)用.pdf

1、天津大學(xué)博士學(xué)位論文平面型共振隧穿二極管與共振隧穿晶體管的研究與應(yīng)用姓名：胡留長申請學(xué)位級別：博士專業(yè)：微電子學(xué)與固體電子學(xué)指導(dǎo)教師：姚素英郭維廉20051201ABSTRACTInthisthesis，thefabricationofplanarresonanttunnelingdiodesandmesatyperesonanttunnelingdiodes，themeasurementandanalysisofMOBILE(mono

2、stable—bistabletransitionlogicelement)circuitcellbuildupbyplanarresonanttunnelingdiodes，themeasurementandanalysisofseriesresistanceofresonanttunnelingdiodes，andfabricationofresonanttunnelingtransistorarestudiedMaterialst

3、ructuredesignandpreparation，devicestructureandphotomasksdesign，chipprocess，performancetestingandanalysis，andcircuitperformanceareinvolvedinthesystemicworkFollowingsarethemainachievementsofthethesis：1Resonanttunnelingdiod

4、eswereSuccessfullyfabricatedusingNGaAssubstrate2Theplanarresonanttunnelingdiodeswerefabricatedforthefirsttimeinmainland，withoutetchingthesurfaceheavilydopedlayerbeforeionimplantation，anewmethodwaspresentbybringingthecoll

5、ectortothesurfaceusingsiliconimplantation，theideaoffabricatingrealplanarRTDwasmadetrueItspropertieswerestudiedandcomparedwithmesatypeRTD3TheMOBILEcircuitcellbuildupbyplanarresonanttunnelingdiodesandrelativecircuitwerestu

6、died，andpre]iminaryworkwasdoneforthenextmixintegrationwithplanarRTD4TheformingcauseofseriesresistanceofRTD，theeffectonRTDcircuitthemeasurementmethodofseriesresistanceandreductionofseriesresistancewerestudiedsystematicall

7、Y5TheschottkygatedresonanttunnelingtransistorswerefabricatedforthefirsttimeinChinaincludingtrenchtypeGRTTandselfalignedGRTT，itspropertieswerestudiedandanalyzedKeywords：planarresonanttunnelingdiodes；MOBILE；ionimpantation；