基于阻性存儲器密度應用的工藝解決方案研究.pdf

1、復旦大學碩士學位論文基于阻性存儲器密度應用的工藝解決方案研究姓名：唐立申請學位級別：碩士專業(yè)：微電子學與固體電子學指導教師：林殷茵20080525摘要AbstractAsthefeaturesizescalingdowntheFlashnonvolatiletechnologycomesupagainstthechallengeoflimitedsizeBothphasechangememorybasedonchalcogenidean

2、dresistiverandomaccessmemorybasedonmetaloxideareregardedascandidatesofnextgenerationnonvolatilememorybecauseofowncharacteristicmeritsrespectivelyAtthesametime，itistheconcentratedresearchpointthathowtoactualizetwokindsoft

3、woterminalresistance—memoryintohighdensityapplicationAimedatthisinstance，thethesisproposeshighdensityapplicationschemesforPCMandReRAMfromtheviewofprocess，andtheseschemesaleprovedbyexperimentsTheresearchfocusesonmemorydev

4、iceandselectelementOnthehandofmemorydevice，forphasechangememorythe3Dstructureofphasechangememoryfirstlyformedbydielectric’Selectricbreakdownwhichisnondependonlithographytechnology，thatprovidepossibilityofmultilayermanufa

5、cturingandofeventualhighdensityapplicationForresistiverandomaccessmemorycharacteristicsandmechanismofCuxOresistivememoryweremainlyresearched，andthecorrespondingsolutionforbackendprocessintegrationWasputforwardOntheotherh

6、andofselectelement，theITxRxDselecttechnologywasfirstlyputforwardforhighdensityandlowleakagecurrentBasedontheptypesemiconductorcharacteristicforphasechangematerialsandCuxO，wehadmanufacturedtheheterojunctiondiodebystoragem

7、aterialsTheheterojunctiondiodeWasusedinlTxRxDstructureastheselectelementMultilayermanufacturinginprocessviewisthegreatestsamepointforabovesaidschemes，whichprovidesprocesssolutionfortwoterminalresistance—memory’Shighdensi

8、tyapplicationThispaperconsistsof6chaptersChapter1istheintroductionofnewtypenonvolatilememoryChapter2depictsthemechanismandstructure’Sdevelopmentofphasechangememoryandmechanismofbreakdown，finallyprovidestheschemeofelectri

9、c—manufacturingindetailTheCuxOresistivememoryanditsprocessintegration∞hemeisstudiedinChapter3Chapter4istheselectedelementtechnologyforresistancememory’ShighdensityapplicationTheschemeof1TxDxRisfirstlyproposed，andthenhete

10、rojunctiondiodesbasedphasedchangematerialsaresuccessfullyfabricatedHeterojunctiondiodebasedonphasechangematerialsandheterojunctiondiodebasedonmetaloxidearerespectivelyusedin1TxDxRstructureforhighdensityapplicationConclus