粉末冶金法制備β-SiC-,p--Al電子封裝材料工藝與性能研究.pdf

1、西安科技大學碩士學位論文粉末冶金法制備βSiCAl電子封裝材料工藝與性能研究姓名：于慶芬申請學位級別：碩士專業(yè)：材料加工工程指導教師：王曉剛@Subject：FabricationProPertiesofβSiCpAlElectronicPackagingMaterialbyPowderMetallurgySpecialty：MaterialProcessingEngineeringName：YuQingfen（Signature）In

2、struct：WangXiaogang（Signature）ABSTRACTWithexcellenthighqualityofhighthermalconductivitylowexpansionhighmodulehighchemicalstabilitylowdensityβSiCPAlcompositeenjoysgreatpotentialofapplicationintherealmofelectronicpackaging

3、.PowderMetallurgyMethodhasthefollowingadvantages:mixingunifmitycomponenteasilycontrolledfmingmeeasilygetinghighdensitycompositematerialsetc.itisacommonlyusedmethodstomanufactureMetalMatrixCompositesespeciallyparticlerein

4、fcedmetalmatrixcomposites.SoweadoptPowderMetallurgyMethodtomanufactureβSiCAlElectronicpackagingmaterialswithvolumefractionto50%.TestingthetapdensitybulkdensityposityofβSiCpowdertheaveragesizeD=17.94μmofβSiCparticlesisgoo

5、datreinfcementphase.Surfacetreatmentmethodsfthesicmicropowderincludethefollowingthreesteps:thehightemperatureoxidation1100degreesHFacidpickling200degreesdryingthesemethodseliminatedadsptionofgasesmoisturemadeedgespassiva

6、tionimprovedthedispersionofSiCmicropowdermanufacturedβSiCAlelectronicpackagingmaterialswithenhancebodydistributedevenlyhighdensitypeless.Intheprocessthespecificpreparationprocessesoffmingpressuresinteringtemperaturehotpr

7、essurehaveaneffectsonthematerialmphologyrelativedensity.Determiningthefmingpressure320MPathesinteringtemperature1000℃hotpressure3MPaastheoptimalparametersinthepreparationof50%βSiCpAl.TosumupThe50%βSiCpAlcompositesfabrica

8、tedbypowdermetallurgywith17.94μmsphericalSiCparticlesenjoyperfectcomprehensivethermalphysicalproperties.:itsitscoefficientofthermalexpansionis8.86106K1under20℃～150thethermal℃conductivityis124Wm1K1.Owingtothehightemperatu