探針游移對測試大型硅片微區(qū)薄層電阻的影響及仿真技術研究.pdf

1、河北工業(yè)大學碩士學位論文探針游移對測試大型硅片微區(qū)薄層電阻的影響及仿真技術研究姓名：趙麗敏申請學位級別：碩士專業(yè)：儀器科學與技術指導教師：劉新201012iiTHEINFLUENCEOFPROBEWANERINGTOTESTINGSHEETRESISTANCEOFLARGESILICONRESEARCHONSIMULATIONTECHNOLOGYABSTRACTResistivityisaveryimptantperfmanceinde

2、xinsemiconductmaterialbecauseitwillinfluencetheperfmanceofthedevicedirectly.Wecangetsomeimptantinfmationsuchasthedopingcontentfrommeasuringit.Therefetestingthemicroareasheetresistancehasbecomeanimptantprocessinchipproces

3、sing.Fourpointprobetechnologyisaspecialmethodtomeasuretheresistivityofsemiconduct.AsameansofICtestingfourprobetechnologyhasimptantapplicationsindertomeettheneedsoftherapiddevelopmentofintegratedcircuitswehaveproposedhigh

4、ertestingrequirements:notonlysimplefastaccuratemustmeetthedeedsofeachprocess.Thisrequiresnotonlyneedperfectdesigntoolsstableproducingcapacityalsoneedreliabilityhighprecisiontestingmeans.Thispaperfirstintroducesthebackgro

5、undoffourprobetechniqueresearchstatusfuturetrendsbothathomeabroadapplicationclassificationoffourprobemethodanalyzestheprinciplesacteristicsofvariousmethodsfocusontheconventionallinerfourprobemethodmodifiedVanDerPauwmetho

6、dRymaszewskimethod.Analysistheinfluenceofprobewaveringusinglinerfourprobemethodthesquarefourprobemethodcomparedthem.Improvedthefourprobetestsystemlastsimulating.Theinnovationofthistopicasfollows:Onesystematicanalysisofth

7、einfluenctialfactsintheprocessoffourprobediscussthecrectionusingfiniteelementmethodtwomakefurtherresearchonthedetailofthetestincludingthechoiceofthetestcurrentprobethepositionoftheprobethreeanalysistheinfluenceofprobewav

8、eringusinglinerfourprobemethodthesquarefourprobemethodcomparedthemfourusingsimulationtechnologytodesignfour–probesystemrealizedatestfthemeasurementcalculatederroftheprobewer.KEYWDS:microareasheetresistancefourprobemeasur