非晶態(tài)碳膜和碳氮薄膜的結(jié)構(gòu)與性質(zhì).pdf

1、㈩㈣州㈨l0Y15j11j石⑧天畢大獸非晶態(tài)碳膜和炭氮薄膜的結(jié)構(gòu)與性質(zhì)碩士學(xué)位論文■■一一一________一學(xué)科專業(yè)：材料物理與化學(xué)作者姓名：吳堅清指導(dǎo)教師：白海力教授麗j天津大學(xué)研究生院天津大學(xué)碩士學(xué)位論文ABSTRACTAmorphouscarbon(a—C)andcarbonnitride(a—CNx)filmshavebeenextensivelyinvestigatedduetotheirexcellentpropertie

2、s，suchashighhardness，wearresistancecontrollableopticalbandgapandadjustableelectricalconductivityInliterature，thereportedresultsarecontradictoryregardingtheeffectofcarbonhybridizationstates，disorderandNincorporationontheo

3、pticalandelectricalpropertiesInordertofurtherinvestigatethemicrostructureandpropertiesoftheaCandaCNxfilms，wefabricatedthefilmsbyDCfacingtargetreactivemagnetronsputteringunderdifferentsputteringpower(P)andnitrogenpartialp

4、ressure(_PN2)，respectivelyAndthestructure，defectsopticalandelectricalpropertiesofthesampleswereinvestigatedsystematicallySputtereda—Cfilmsaresp2一richbuthighlydisorderedwitharathersmallsizedaromaticsp2CclustersComparedtOt

5、hewide—gapinsulators，egtaCandDLC，allthesputteredaCfilmspossessmuchnarroweropticalbandgapandrelativelyhigherconductivityWithincreasingP，thehighenergyofincidentCatomscausestheconversionofsomepreviouslyformedCsp3bondstoCsp2

6、bondsSOthatthefractionofsp。Candthenumber(orthesize)ofsp2clustersinthefilmsincreaseIngeneralthisstructuremodificationincreasesthedefectdensityN，determinedfromtheelectronparamagneticresonance(EPR)TheopticalgapwidensfromO11

7、to070eVasPincreases，whiletheroom—temperatureconductivitydecreasesbytwoordersofmagnitudeAtlowPthestructuredisorderwithmoredistortedbond—anglesisthemainreasonfornarrowedgapThedecreasinglocalizationparameterN(EF)7。3forthea—

8、CfilmsdepositedathighPreflectsasmallerhoppingconductivitybelow300KWiththeincreaseofPs2thefractionofCNbondedcarbons(ortheNcontent)increasesprimarilyattheexpenseoftheC—CbondedcarbonsandthenreachesitssaturatedvalueTheincorp

9、oratedNpreferentiallyformsdifferentkindsofnonaromaticCNphase，egnonaromaticNsp3C，C=NandN_Sp2CbondsAsPs2increases，thechangesofopticalbandgap，opticalconstants0，助andelectricalconductivityarerelatedtotheenhancedlocalizationof