[雙語翻譯]功率放大器外文翻譯--基于fpga器件的并行射頻功率放大器溫度監(jiān)測系統(tǒng)

1、3150 英文單詞， 英文單詞，1.7 萬英文字符，中文 萬英文字符，中文 5400 字文獻出處： 文獻出處：Wojtkowski W, Zankiewicz A. Parallel RF Power Amplifiers Temperature Monitoring System Based on FPGA Device[J]. IFAC-PapersOnLine, 2018, 51(6): 414-419.Parallel RF P

2、ower Amplifiers Temperature Monitoring System Based on FPGA DeviceWojciech Wojtkowski. Andrzej ZankiewiczAbstractThe paper describes FPGA based temperature measurement system, for parallel monitoring of temperatures of t

3、he power semiconductors devices in RF power amplifiers. Proposed system allows for fast detection of the asymmetry in parallel RF power amplifier caused by failure of a single semiconductor power device like CMOS or MOSF

4、ET high power transistor. This information is important for evaluation of the system efficiency, current flow symmetry, and allowable output power in a given RF amplifier configuration. The article presents original conc

5、ept of reading measurements from many 1-wire temperature sensors with minimal time delay between individual measurements thanks to digital temperature sensors operating on separate serial 1-Wire buses. FPGA device collec

6、ts data from the temperature sensors and sends them through wireless interface to a remote terminal. The structure of the system as well as particular devices are described in the paper. The paper also presents selected

7、results of practical experiments performed to confirm that the assumed concept of using an FPGA device to perform the high simultaneous readings from many sensors is feasible.Keywords: Digital temperature sensor, RF powe

8、r amplifiers, temperature measurement, 1-Wire bus, semiconductor power devices.1. INTRODUCTIONPower semiconductor devices are crucial components in modern power electronic systems. Their condition has high influence on t

9、he overall system performance and can cause system’s malfunction in a worst case. One of the important parameters, which give information about their condition and which can be easily observed on-line during the system o

10、peration, is the temperature of the power semiconductor devices. The power semiconductor devices frequently operate in a thermally stressful conditions. The increasing junction temperature of a power semiconductor device

11、 is directly related with increasing power losses and can lead to semiconductor failures. Rising temperature also decreases the region of safe operating area of the semiconductor device. Monitoring of the temperature is

12、therefore important for optimal operation and for reliability reasons. If the switch temperature (junction or case) is known during the operation of a RF power amplifier, real-time control systems could be developed to i

13、mprove the system reliability.The most popular methods used to estimate the temperature of power semiconductor devices using thermo-sensitive electrical parameters are discussed in (Avenas et al., 2012a). The methods are

14、 the collector-emitter voltage under low current levels, the threshold voltage, the voltage under high current levels, the gate-emitter voltage (for IGBT transistors), the saturation current, and the switching times. All

15、 these methods have different characteristics in terms of sensitivity, linearity, accuracy, calibration needs, and possibility of characterizing the thermal impedance or the temperature during the operation of the conver

16、ter. The collector-emitter voltage measured during conduction of low currents is the most suitable method of the chip temperature estimating (Avenas et al., 2012b).Fig. 1. A general structure of RF power amplifier with p

17、arallel power combiningRF signals obtained from the power amplifiers block can be combined using various techniques like transformers (Kraus et al., 1980, Javidan et al., 2010) or phase commutators (Sadowski, 2010). Powe

18、r combining network based on transformers can be realized in Series Combining Transformer (SCT) and Parallel Combining Transformer (PCT) configurations presented in Fig. 2 and Fig. 3 respectively.Fig. 2. Series Combining

19、 TransformerFig. 3. Parallel Combining TransformerEach of these solutions has some advantages and disadvantages that are analyzed and described in details in many scientific papers e.g. (An et al., 2008, Kim et al., 2012

20、). In the real transmitters there are also implemented various automatic control blocks that monitor state of the power elements and in case of any irregularities can disable a single PA. In order to operate properly, su

21、ch control blocks need information about state of every power transistor including such parameters like temperature, load and many other. It is also very important for these parameters to be measured at the same time in