電子信息工程畢業(yè)設(shè)計外文翻譯

1、ANovelBuiltinCMOSTemperatureSensfVLSICircuitsWangNailongZhangShengZhouRunde(InstituteofMicroelectronicsTsinghuaUniversityBeijing100084China)Abstract:Anoveltemperaturesensisdevelopedpresentedespeciallyfthepurposeofonlinet

2、hermalmonitoringofVLSIchips.Thissensrequiresverysmallsiliconarealowpowerconsumptionthesimulationresultsshowthatitsaccuracyisintheorderof018℃.TheproposedsenscanbeeasilyimplementedusingregularCMOSprocesstechnologiescanbeea

3、silyintegratedtoanyVLSIcircuitstoincreasetheirreliability.Keywds:temperaturesensthermaltestabilityfrequencyoutput.EEACC:1265A25602570DCLCnumber:TN47Documentcode:AArticleID:025324177(2004)03202522051IntroductionDuetothead

4、vancesinthefabricaionprocessfieldofintegratedcircuitsthecomponentdensitytheoverallpowerdissipationofthehighperformanceVLSIchipsincreasecontinuously.Atthebeginningofthiscenturythepowerdissipatedinasinglechiphasexceeded100

5、Wtightlypackedchipassembliesasthemultichipmodulescanevendissipatethousswatts.Therefethethermalstateofintegratedcircuitshasbeenalwaysagreatproblemconcernedisconsideredasabottleneckinincreasingtheintegrationofelectronicsys

6、tems.Toovercomethisproblemmanyresearchersdevelopedlow2powerdesigntechniquesfVLSIsystems.Indertoavoidthermaldamagescontinuousthermalmonitingshouldbeappliedduringboththeproductionreliabilitytestingthefieldoperation.Aneffic

7、ientwayistobuildtemperaturesenssintoallVLSIchipswiththeappropriatecircuitryprovidingeasyreadout.InsomeearlierwkstheresearchersusedtheparasiticlateralsubstratebipolartransistswhichcanberealizedinmostoftheCMOSprocessesasth

8、ermalsensors.TheseareusuallyPTATsenss.TheweaknessofthesesensisthatthebipolarstructuresarenotwellacterizedinaMOSprocess.ThusalthoughtheycanprovideasatFig.1Temperaturesensdesignedbasedonavoltage2controlledrelaxationoscilla

9、t3.1VoltageoutputsensOurvoltageoutputsenscircuitexploitsthetemperaturedependenceofthemosimptantparameteroftheMOStransistnamelythethresholdvoltage(VT).Thethresholdvoltagehasanegativetemperaturecoefficientas:VT(T)=VT(T0)a(

10、TT0)(1)whereaisthetemperaturecoefficientwithatypicalvalueof118mVKinCMOS0135Lm5VtechnologyVT(T0)isthevalueofthethresholdvoltageattemperatureT0.AsshowninFig.1thevoltageoutputsensisathresholdvoltagereferencecell.Thepchannel

11、transistsP1P2constituteacurrentmirr.ThecurrentoftransistN1ismirredtotansistsN2N3N4.ThevoltageonthesetransistsisfedbacktothegateofN1.ForeasycalculatingwechooseasamesizeofthetransistsN2N3N4(BN2=BN3=BN4)wechooseappropriates

12、izeoftheothertransiststoensurethatthetransistorsP1P2N1N2N3N4areallinthestateofsaturation.Thentheoutputvoltagesofthissensorareindirectproptiontothethresholdvoltagelinearwithtemperaturetheirvaluesare:VH=VT(12KP12KP123KN12)