垂直雙擴散MOSFET柵電阻的測試研究.pdf

1、蘇州大學碩士學位論文垂直雙擴散MOSFET柵電阻的測試研究姓名：周金峰申請學位級別：碩士專業(yè)：電子與通訊工程指導教師：王明湘虞強20071101StxldyOnTestingforGateResistanceofVerticalDoublediffused^!蜱FE!————————AbstractStudyonTestingforGateResistanceofVerticalDoubledi仃usedMOSFETAbstractVe

2、rticalDouble—diffusedMOSFET(VDMOSFET)isamaintypeamongcurrentPowerMOSFET’SForVDMOSFETtheswitchingperformanceisquiteimportantforitsapplicationandmainlydependsontheproductoftheequivalentGateresistance＆betweenGateandSourcean

3、dinputcapacitanceCissThispaperwillpresenttheadvantagesandapplicationsofVDMOSFETanditsstructure，workingprinciple，manufacturingprocessandequivalentcircuitmodelThispaperwilldescribeeachcomponentofGateresistance心andGatecapac

4、itanceCgbasedontheVDMOSFETdevice，andgiveananalysisoftheeffectofGateresistanceontheswitchingperformanceofVDMOSFETdeviceduringgateChargedischargeandintroducehowtodecreasetheGateresistanceandGatecapacitanceThispaperwillpres

5、entalsoseveralkindsoftestingmethodandtestingequipmentsonimpedance，twotestingequipmentsHP4285AandIpTestMostrakCallbeselectedtotesttheGateresistanceRgandGatecapacitanceCgitwillanalyzetheeffectontestingofKandCgunderdifferen

6、ttestingfrequencyandDCbiasVGSbasedontheMISCVcufveThroughaseriesoftestingexperiments誦tllvariableDCbiasVos，frequencyandACsigrlalinputanoptimum＆testingmethodologyisdevelopedfordevicecharacterizationUndersuchconditions，麗meno

7、ughnegativeDCbiasforNtypeVDMOSFETandpositiveDCbiasforPtypeVDMOSFETthedeviceisinaccumulationstate，andprovidingasmallACsignalinputwi也thefrequencyIMHzstablevalueof＆andCgCanbeobtainedUsingthisKtestingmethodsomeofthechipfabri

8、cationandpackageprocessesinduceddefectsCanbesuccessfullyidentifiedThispaperwilldescribesomeofthedevicefabricationrelatedissues，suchasimproperionimplantationofgatedopingandthemetalcontactdefects，andthewirebondingproblemsi

9、nthepackagingprocess，suchasbondingliftandheelcrackofthegatewireforVDMOSFETThesedefectsarcdifficulttodiscoverthroughageneralDCmeasurementmethodbutCanbeidentifiedthroughtheKtestingthispaperdescribedKeywords：VDMOSFETSwitchi