單晶硅反應(yīng)激波刻蝕試驗(yàn)研究.pdf

1、南京航空航天大學(xué)碩士學(xué)位論文單晶硅反應(yīng)激波刻蝕試驗(yàn)研究姓名：溫軍戰(zhàn)申請(qǐng)學(xué)位級(jí)別：碩士專(zhuān)業(yè)：機(jī)械制造及其自動(dòng)化指導(dǎo)教師：汪煒20080301單晶激波刻蝕試驗(yàn)研究IIAbstractThetheeticalexperimentalresearchshowsthattheshockwaveisproducedwhenthesoundwavewithlimitedamplitudepropagatesshtpulseintheliquidarr

2、ivesatsurfaceofmaterials.Theshockwavehastheacteristicsofhighenergyinstantaneousgreatpressure.Reactiveshockwaveetchingwhichisbasedonthefocusedofpulseultrasoundtechnologyispresented.Duetothenonlinearpropagationeffectsthehi

3、ghenergytransientpressurewaveisintroducedbyashockwavegeneratproducingthefocusedofpulseultrasound(1MHzso).Combinedwithwetetchingprocessthematerialinfocusedzonecanbeetchedquicklybyphysicalchemicalprocess.Detailsareasfollow

4、s:1.Accdingtothestructureacteristicofmonocrystallinesiliconreactiveshockwaveetchingofmonocrystallinesiliconisresearched.Sonochemistrydynamicsofetchingareanalyzed.2.Onthebasisofsystemprincipletheexperimentsystemisdevelope

5、d.Thegeneratthepowertheetchingratearetested.Thefocusareaofpulsedultrasoundismeasured.Theregionalsizeofthefocusareaisanalyzed.Theimpactofshockwavefrequencyonthebiggestpressurefocalplaneisanalyzedinthepaper.3.Themaskinglay

6、eretchingsolutionarechosefexperiments.Incomparisonwithultrasoundbathmagicstirringmethodsexperimentsshowthatshockwavecanreducesurfaceroughnessincreasetheetchratebyincreasingthemasstranspt.Furthermetheinfluenceofetchantcon

7、centrationstemperaturepowerofshockwavetheprincipleofreactiveshockwaveetchingofmonocrystallinesiliconarealsoanalyzedwhichisthefoundationfthefurthertheeticalexperimentalresearch.Keywds:Reactiveshockwaveetching，monocrystall