帶前放Si-APD探測器的動態(tài)特性研究.pdf

1、南京理工大學碩士學位論文帶前放SiAPD探測器的動態(tài)特性研究姓名：居峰申請學位級別：碩士專業(yè)：光學工程指導教師：來建成20111220碩士論文AbstractA~ral鋤chephotodiode’sch撒cteristicof11i曲respo船iVelless、faSt陀sponse赳ldsmmlsizcmakesitbe塒dely髑edi11melowlightsigllalfieldnrcalizcI姍ltipliere舵ctb

2、ygenerateiIlgc刪erswitll廿lehelpofVi觴Voltagen’sch盯acteriSticp砌ete瑙arelligldycorrcspoIldwim、，i觴Voltage、tempera：curea11dthel吼inanceof耐bientlightsi罌lalSo螄spapermakearesearchontlledyn鋤iccharact砸sticofSiAPDphotodetectorOnnleb嬲e

3、ofindepthirⅣeStigationofiIlfom：lation，t11ispaperexpl2LinsnlemeaIlingsofdyn砌cc脅cterizep鋤metersofSiAPDPhotodetector嘶Ⅱ1pre鋤plifierandbuildup缸eXl)erimentpla_tfomnlatc孤beusedt0mearsuretlleparametersatdifferenttempera：turesTMs

4、eXp嘶mentfirstme踟remep觚吼eterSofakindofSiAPDPhotodeteCtor晰nlpre鋤叩lifier—C30950Eatroomt鋤叩er砷山eIttIJmsouttllalmeworkVoltageis308VVoltageresp0粥iVe∞ssis86105v／w觚dNEPis13lo_14w／√Hz1kme掰嘣珊entreSultsaregoodcorr吒spond謝tllfactoDrpa

5、rametersItprovcsmeexpe血Ilentisfc笛ibleARerpr0ViI瑪tllefcaSibili夠ofmeexperiment，mispaperme豁ureaIld鋤alysistlleparameterSatdi丘erentt唧raturesarlddi婦陪re】毗ambiemlightnleresultShowsworkVoltagedropswhent11ebackgrouIldopticalsignal

6、goesup，sigIlifi伽ltlydi行brentfromtlleValuesofm缸mfac眥parameterS，tllediVercific—ationoft：heparameterSareve巧impona呲iIlmeoptimumdesignofphotodetectorsystemhladd“ion，Whenmel岫enof柏1bientlightiIlce雒es，iIlmebestworks僦e，voltagereS

7、pollSiVenes—sdrops，darkcurrentandNEPiIlcreaSes；Witlltempera：tureincreaSes，workVoltageiIlcreaSes，theworkvOtage—teInperm鵬coe伍cientisabout24v／℃，鋤diIltllebestworkgtate，voltage∞SponSiVeness出0ps，NEP鋤ddarkcu仃emiIlcreaSesIns硼呲la

8、Ⅸ也erese鯽ch0nt11isp印erh嬲refcrcIlcevalueiIl伊aSpnledymIIliccha聯(lián)lcteriSticofSi—APDopticaldetectorwimpre觚lf—ier謝lichis900dfor0ptiml刪desi印ofSiAPDoptic2L1detector謝tlIp咖=IlficrAbstract：Avalanchephotodiode，vol姆respo璐e，bi嬲v0蛔ge，te