nc-Si-H-c-Si異質(zhì)結(jié)硅磁敏三極管特性研究.pdf

1、分類號一UDC密級公開暑哦滬產(chǎn)篝。碩士研究生學(xué)位論文ncSi：H／cSi異質(zhì)結(jié)硅磁敏三極管特性研究申請人：學(xué)號：培養(yǎng)單位：學(xué)科專業(yè)：研究方向：指導(dǎo)教師：完成日期：李逸凡2131258電子工程學(xué)院微電子學(xué)與固體電子學(xué)傳感器MEMS趙曉鋒教授2016年3月27日黑龍江大學(xué)碩士學(xué)位論文AbstractInthispaper，thesiliconmagneticsensitivitytransistor(SMST)withnc—Si：H／c—S

2、iheterojunctionisconstructedbasedontheMicro—Electro—MechanicalSystems(MEMS)andPlasmaEnhancedChemicalVaporDeposition(PECVD)，thestructureownsabase(B)，acollector(c)andaemitter(E)，whichtheSMSTemitterjunctionisncSi：H(n)／c—Si(

3、p)heterojunctionThroughthetheoreticalanalysisoftheheterojunctionhighinjectionratiocharacteristics，theworkingprincipleoftheSMSTwithnc—Si：H／c—Siheterojunctionisgiven，thisstructurecanimprovethemagneticsensitivecharacteristi

4、candtemperaturecharacteristicoftheSMSTbytheoreticalanalysisOnthisbasis，theATLASsoftwarewasusedtoestablishthesimulationstructuremodeloftheSMSTwithncSi：H／c—Siheterojunction，whichcomparedwithcorrespondingcharacteristicofthe

5、SMSTwithhomojunctionbyanalyzing／c—VcEpropertymagneticpropertyandtemperaturepropertyandstudytheinfluenceofthebaseregionlength∞)，thebaseregionwidth(w)andthecollectorsize(sc)onthepropertyoftheSMSTwithncSi：H／c—Siheterojuncti

6、on，andthestructure’SgeometricparametersareoptimizedBasedontheabove，thispaperachievedthedesign，fabricationandpackagingoftheSMSTwithncSi：H／cSiheterojunctionchipontheptypeorientationmonocrystallinesiliconsubstratewithhighre

7、sistivity601oooQ’cm)Atroomtemperature，studyingtheelectricalcharacteristic，magneticsensitivecharacteristicandtemperaturecharacteristicoftheSMSTwithncSi：H／cSiheterojunctionbyadoptingsemiconductorcharacteristicanalysissyste

8、m(KEITHLEY4200)，magneticfieldgeneratorsystem(CH—too)andhigh／lowtemperaturetestchamber(OBISGDJS100LG—G)，andanalysistheimpactofthebaseregionlength∞)onthecharacteristicThevoltagemagneticsensitivitiesoftheSMSTwithnc—Si：H／c—S