溫度傳感器外文翻譯

1、<p><b>　　英文翻譯</b></p><p>　　Temperature humidity sensor</p><p>　　The sensor in type many sensors, the temperature sensor and applies two aspects in its output both is second to a

2、nd with it correlation temperature is an important physical parameter, he affects all physical, chemistry and biomedicine process march, regardless of in the industry, the agriculture, the scientific research, the nation

3、al defense and people's daily life each aspect, the temperature survey and the control all is the extremely important with the electronic technology and the materials </p><p>　　Sensor classification carr

4、ies on classified resistance type PN according to the manufacture temperature sensor material and the principle of work to tie the type thermoelectricity type radiation formula </p><p>　　r operating region i

5、s refers to the resistance value to have the remarkable change temperature sensor along with the temperature change, it may transform directly the temperature as the electrical the operating temperature scope, its resist

6、ance the which increases along with the temperature ascension is called positive temperature coefficient (PTC); Its resistance number the which reduces along with the temperature t ascension is called negative temperatur

7、e (NTC); The negative temperature which </p><p>　　After in semiconductor multi-crystal grain structure BaTio3, its crystal grain (general size small is approximately 3-10 µ m) the interior is the semico

8、nductor nature; But the crystal boundary (has f e r r o electricity) for the high-resistance area. When type crystal external voltage, voltage majority of landings on high-resistance crystal boundary level, thus the crys

9、tal boundary has an effect to the material electric conductivity .The electron must pass through the crystal boundary barrier po</p><p>　　When the temperature is lower than Curie temperature TC, ε e ff the v

10、alue is approximately about 104, therefore ø0 very small, the ceramic electronic resistivity rho approaches in the volume resistivity ρ v, after the temperature surpasses Curie temperature TC, the value drops sudden

11、ly, the A value increases, causes rho the value sharp increase, dopes BaTio3 and rho and between the temperature relational like chart .NTC t h r principle of work NTC the r s tor majority is by the transition family<

12、/p><p>　　In the formula: The d-- oxygen octahedron gap is away from (Ni O is the Na Cl structure); V0-- lattice vibration frequency; The Ei-- activation energy, indicated the electron jumps originally from one

13、in the position the energy which needs to the neighboring atom site. Or rewriting Then the electronic resistivity is: 0Ne-Ei/kT If command, then type changes: rho =ρ0eEi/KT Obviously the metal oxide compound semiconducto

14、r electronic resistivity mainly has the transport ratio along with the temperat</p><p>　　The CTR r usually uses the glass semiconductor processing, take the vanadium as the main material. Mixes in certain ma

15、terials and so on oxide compound like C a O, B a O, S O or P2O5, TiO2 becomes after the hot dissolve. 3.2 temperature sensor basic characteristic in view of the fact that the temperature sensor type is many, moreover its

16、 work mechanism is also different. This mainly introduces t the hot sensitive diode and the hot sensitive transistor characteristic and the parameter. 3.2.1 from </p><p>　　PTC switch positive temperature coe

17、fficient anti- curve. value rises suddenly to some temperature nearby the maximizing. </p><p>　　Through the doping .If dopes P b in BaTio3, may cause Tc to the high temperature traverse, mixes in elements

18、 and so on S r or S n after BaTio3, may cause TC to the low temperature traverse. May according to need to adjust t Curie temperature TC. The actual resistance number expressed with RT. Is under certain ambient temperat

19、ure, uses causes the resistance number change not to surpass the resistance value which 0.1% survey power actual resistance value is called the zero energy resistance value</p><p>　　T change, and is proporti

20、onal with material constant B. Therefore, usually while gives the resistance temperature coefficient, must point out when the survey temperature, positive temperature coefficient t a T in value superior constant A. Slow

21、 aberration positive temperature coefficient value in 0.5%/℃ 110%/℃ between. But the switch (mutant) positive temperature co efficient T may achieve 60%/℃ or higher. Material constant B is uses for to describe the t mat

22、erial physical property - parameter</p><p>　　The H size and the t structure, locates the environment medium type, the velocity of movement, the pressure and the heat conduction performance and so on related,

23、 when ambient temperature change, H has the change. (2) capacity and the time-constant r appliance has certain calorific capacity C, therefore it has certain warm. Also is the temperature change needs certain time. Wh

24、en the is heated up the T2 temperature, puts to the temperature is in the T0 environment, does not add the electric po</p><p>　　Expressed in the environment atmosphere the steam content physical quantity is

25、a y. The humidity expression method has two kinds, namely absolute humidity and relative h um (RH).The absolute humidity is refers to in the atmosphere the water content absolute value, the relative humidity is refers to

26、 in the atmosphere the steam to press with the identical temperature under ratio of the saturated steam tension, expressed with the percentage. The humidity sensor or the dew cell are refer to the para</p><p&g

27、t;　　Moreover, according to the ion electric conductance principle, the structure not compact semiconductor ceramics crystal grain has certain crevice, reveals the porous capillarity tubular .The drone may adsorbs throug

28、h this kind of pore between various crystal grains surface and the crystal grain, because adsorbs the e separable relieves the massive electric conduction ion, these ions are playing the electric charge transportation ro

29、le in the water adsorbed layer. along with humidity increase, ma</p><p>　　The carbon wet sensitive resistor is one resistance - humidity characteristic is the dew cell. With the organic matter polypropylene

30、plastic piece or the stick are substrates, spreads cloth one to include the conductive carbon granule organic textile fiber constitution. This kind of wet sensitive resistor craft is simple, is advantageous for the us

31、es the organic material absorption of moisture, the volume expansion, between the carbon granule distance increases, thus the resistance value incr</p><p><b>　　溫度傳感器</b></p><p>　　在種類(lèi)

32、繁多的傳感器中，溫度傳感器在其產(chǎn)量和應(yīng)用兩方面都是首屈一指的。熱量及與 之相關(guān)的溫度是一個(gè)重要的物理參數(shù)，他幾乎影響所有的物理、化學(xué)和生物醫(yī)學(xué)過(guò)程的進(jìn)行。因此，無(wú)論在工業(yè)、農(nóng)業(yè)、科學(xué)研究、國(guó)防和人民日常生活各個(gè)方面，溫度測(cè)量和控制都是極為重要的課題。隨著電子技術(shù)和材料科學(xué)的發(fā)展，對(duì)各種新型的熱敏元件及溫度傳感器要求結(jié)構(gòu)先進(jìn)、性能穩(wěn)定，以滿(mǎn)足對(duì)溫度測(cè)量和控制提出的越來(lái)越高的要求。</p><p>　　溫度傳感器的分

33、類(lèi)按照制造溫度傳感器的材料及工作原理進(jìn)行分熱敏電阻器工作范圍熱敏電阻器是指電阻值隨溫度變化而發(fā)生顯著的變化的溫度傳感器，它可以將溫度直接轉(zhuǎn)化為電信號(hào)。在工作溫度范圍內(nèi)，其電阻隨著溫度的升高而增加的熱敏電阻器稱(chēng)為正溫度系數(shù)熱敏制作PTC熱敏電阻器通常采用鈦酸鋇（BaTio3）陶瓷材料，單純的BaTio3陶瓷在常溫度下具有極高的電阻率，在108Ω·m以上，故為絕緣體。若在BaTio3中進(jìn)行摻雜，可使BaTio3半導(dǎo)體化，例如：摻以

34、0.1%----0.3%的稀土元素，而使其成為在常溫下具有0.1----10Ω·m的N行半導(dǎo)體。具有鐵電性的半導(dǎo)體的BaTio3，當(dāng)溫度達(dá)到居里點(diǎn)Tc時(shí)，它由四方晶系轉(zhuǎn)變?yōu)榱⒎骄?，此時(shí)其電阻率躍增幾個(gè)數(shù)量級(jí)（103-----107倍）。正溫度系數(shù)熱敏電阻器(PTC)就是根據(jù)這個(gè)性質(zhì)制作的。經(jīng)半導(dǎo)體化的多晶粒結(jié)構(gòu)的BaTio3中，其晶粒(一般尺寸小約為3—10µm)內(nèi)部為半導(dǎo)體性質(zhì)；而晶粒間界為高阻區(qū)(具有鐵電性)。

35、當(dāng)樣晶外加電壓時(shí)，電壓大部分降落在高阻的晶界層上，因而晶界對(duì)材料的導(dǎo)電性能起作用。電子從一晶粒必須穿越晶界阻擋層勢(shì)壘才能到達(dá)另一晶粒。在</p><p>　　可見(jiàn)金屬氧化物半導(dǎo)體的電阻率隨溫度的變化主要是有遷移率隨溫度的變化而引起的。當(dāng)溫度升高時(shí)，電阻率下降，呈負(fù)溫度系數(shù)特性。臨界溫度熱敏電阻器（CTR）也屬于負(fù)溫度系數(shù)熱敏電阻器。在某一臨界溫度范圍內(nèi)，其阻值隨溫度上升而急劇下降。</p><

36、p>　　鑒于溫度傳感器種類(lèi)繁多，而且其工作機(jī)理也不盡相同。本節(jié)主要介紹熱敏電阻及熱敏二極管和熱敏晶體管的特性與參數(shù)。熱敏電阻器可以從結(jié)構(gòu)、材料和阻溫特性等多方面進(jìn)行分類(lèi)。按結(jié)構(gòu)形狀分類(lèi)：片狀、墊圈狀、桿狀、管狀、薄膜狀、厚膜狀和其他形狀。按加熱方式分類(lèi)：直熱式和旁熱式。按阻溫度范圍分類(lèi)有：常溫、高溫和超低溫?zé)崦綦娮杵?。按阻溫特性分?lèi)有：負(fù)溫度系數(shù)熱敏電阻器(NTC)，圖4—4中曲線(xiàn)2；開(kāi)關(guān)型正溫度熱敏電阻器</p>

37、<p>　　值與 電阻體溫之間的依賴(lài)關(guān)系，這是熱敏電阻 </p><p><b>　　的基本特性之一。</b></p><p>　　PTC開(kāi)關(guān)型正溫度系數(shù)熱敏電阻器的阻溫特性曲線(xiàn)(圖4—4曲線(xiàn)4)。室溫至居里溫度以下的一段溫度范圍內(nèi)，表現(xiàn)出和一般半導(dǎo)體相同的NTC特性。從居里點(diǎn)開(kāi)始，電阻值急劇上升到某一溫度附近達(dá)到最大值。

38、 </p><p>　　PTC熱敏電阻器的居里溫度TC以通過(guò)摻雜來(lái)控制。如在BaTio3中摻雜Pb，可使Tc向高溫方向移動(dòng)，在BaTio3中元素后，可使TC向低溫方向移動(dòng)?？筛?/p>

39、據(jù)需要調(diào)整居里點(diǎn)TC。熱敏電阻器的實(shí)際阻值用RT來(lái)表示。是在一定環(huán)境溫度下，采用引起阻值變化不超過(guò)0.1％的測(cè)量功率所測(cè)得的電阻值。實(shí)際電阻值又稱(chēng)為零功率電阻值，或稱(chēng)為不發(fā)熱功率電阻值(冷電阻值)。實(shí)際電阻值的大小取決于電阻器的材料和幾何形狀。</p><p>　　熱敏電阻器的實(shí)際阻值與其自身溫度有如下的關(guān)系：為了使用方便，通常取環(huán)境溫可見(jiàn)，在工作溫度范圍內(nèi)，負(fù)溫度系數(shù)熱敏電阻器的隨溫度T的變化有很大的變化，并與

40、材料常數(shù)B成正比。因此，通常在給出電阻溫度系數(shù)的同時(shí)，必須指出測(cè)量時(shí)的溫度，正溫度系數(shù)熱敏電阻的aT在數(shù)值上等常數(shù)A。緩變型正溫度系數(shù)熱敏電阻器的aT值而開(kāi)關(guān)型〔突變型〕正溫度系數(shù)熱敏電阻器的達(dá)到60％／℃或更高。</p><p>　　材料常數(shù)B是用來(lái)描述熱敏電阻材料物理特性的—個(gè)參數(shù)．又稱(chēng)為熱靈敏度指標(biāo)。在工作范圍內(nèi)，B值并不是一個(gè)嚴(yán)格的常數(shù)，隨著溫度的升高而略有增大。一般說(shuō)來(lái)，B值大的電阻率也高。不同B值的材

41、料有不同的用途，如普通負(fù)溫度系數(shù)熱敏電阻的材料常數(shù)B值在2000一5000 K之間。負(fù)溫度系數(shù)熱敏電阻器B值可按下式計(jì)算：耗散常數(shù)H 耗散常數(shù)H定義為溫度每增加一度所耗散的功率。它用來(lái)描述熱敏電阻器工作時(shí)，電阻體與外界環(huán)境進(jìn)行熱交談的一個(gè)物理量。耗散常數(shù)H與耗散功率P。溫度改變量AT的關(guān)系為 熱容量和時(shí)間常數(shù) 熱敏電阻器具有一定的熱容量C，因此它具有一定的熱情性．也就是溫度的改變需要一定的時(shí)間。當(dāng)熱敏電阻器被加熱到了T2溫度時(shí)，放到

42、溫度為T(mén)0的環(huán)境中，不加電功率，熱敏電阻器開(kāi)始降溫，其溫度T是時(shí)間t的函數(shù)，在△t時(shí)間內(nèi)．熱敏電阻器向環(huán)境耗散的熱量可標(biāo)示為：H（T-T0）△t，這部分熱量是由熱敏電 </p><p>　　式中，ζ＝C/H 稱(chēng)為熱敏電阻器的時(shí)間常數(shù)，單位為S。</p><p>　　時(shí)間常數(shù)?可定義為：在恒定的靜態(tài)條件下，熱敏電阻器在無(wú)功率狀態(tài)下，當(dāng)環(huán)境溫度由一個(gè)特定溫度向另一個(gè)特定濕度突然改變時(shí)，電阻體的

43、溫度變化了這兩個(gè)特定溫度之差的63.2％所需的時(shí)間。通常將這兩個(gè)特定溫度選為85℃和25℃，或者100℃和0℃熱敏電阻器用于測(cè)溫和控溫時(shí)，一般要求時(shí)間常數(shù)小。因而，熱容量越小越好。電壓—電流行性表示在特定溫度下，熱敏電阻器兩端的電壓與通過(guò)電阻體的穩(wěn)態(tài)電流之間的關(guān)系，即伏安特性。伏安特性與熱敏電阻器的結(jié)構(gòu)形狀有關(guān)，還與其阻值、材料常數(shù)從所處的環(huán)境溫度、介質(zhì)種類(lèi)等有關(guān)。</p><p>　　PTC熱敏電阻器的伏安特性

44、曲線(xiàn)如圖3—7所示，當(dāng)所加電壓不太高時(shí)，PTC熱敏電阻的溫升不高，流過(guò)PTC熱敏電阻的電流與電壓成正比，服從歐姆定律。隨著所加電壓的增加，消耗功率增加，電阻體溫度超過(guò)環(huán)境溫度時(shí)，引起電阻值增大，曲線(xiàn)開(kāi)始彎曲。當(dāng)電壓增到使電流達(dá)到IMAX最大時(shí)，如電壓繼續(xù)增加，由溫升引起的電阻值增加</p><p>　　超過(guò)電壓增加的速度，電流反而減小，曲線(xiàn)斜率由正變負(fù)。</p><p>　　C熱敏電阻器的

45、伏安特性曲線(xiàn)。在開(kāi)始段同PTC熱敏電阻一樣也服從歐姆定律。隨電流增加，引起熱敏電阻溫升超過(guò)環(huán)境溫度，則其阻值下降。耗散功率增加，相應(yīng)的電壓變化較為緩慢，出現(xiàn)非線(xiàn)性正阻區(qū)b段)。電流繼續(xù)增加，其電壓值增大到最大時(shí)，若電流再增加，熱敏電阻自身加熱劇烈使電阻值減小的速度越過(guò)電流增加的熱敏電阻的電壓降隨電流增加而降低，形成段的負(fù)阻區(qū)。熱敏電阻器的其他參數(shù)標(biāo)稱(chēng)電阻值尺R25 標(biāo)稱(chēng)阻值是熱敏電阻器在25℃時(shí)的電阻值，其值的大小由熱敏電阻的材料與幾